Micron Announces Next Generation DRAM And Cerfe Labs Shows Its Memory Operating At Cryogenic And Very High Temperatures

Enterprise Tech Micron Announces Next Generation DRAM And Cerfe Labs Shows Its Memory Operating At Cryogenic And Very High Temperatures Tom Coughlin Contributor Opinions expressed by Forbes Contributors are their own. Following New! Follow this author to stay notified about their latest stories. Got it! Nov 1, 2022, 03:50pm EDT | New! Click on the conversation bubble to join the conversation Got it! Share to Facebook Share to Twitter Share to Linkedin Micron 1 Beta DRAM Memory Wafer Micron Press Conference Image Memory technology enables today’s computing capabilities that can support applications ranging from video capture to various applications of artificial intelligence (AI).

Memory provides the working space where data is stored during processing. This article will look into recent announcements by Micron on their 1-Beta memory as well as a carbon doped metal oxide memory technology from Cerfe Labs that could enable memories that can operate at cryogenic as well as very high temperatures. Micron announced that it is shipping its 1 Beta DRAM to smartphone ecosystem partners, see image below.

Micron information on its 1 Beta DRAM Image from Micron Press Briefing The company says that it is the first to market with the next-generation process node. It is shipping these products in low-power double data rate 5X (LPDR5X) format today and it uses second generation high-K metal gate (HKMG) technology. LPDDR memory is used in smart phones and other mobile devices.

The movement to 5G networks is driving faster communication rates and this requires greater DRAM memory. The 1 Beta LPDDR5X provides 16Gb per die capacity b(more than 35% higher than the prior generation), an 8. 5Gbps data rate and a 15% power saving compared to prior generation products.

The power savings are also enabled by the implementation of new JEDEC enhanced dynamic voltage and frequency scaling extensions core (eDVFSC) techniques on this 1β-based LPDDR5X. The addition of eDVFSC at a doubled frequency tier of up to 3,200 megabits per seconds provides improved power savings controls to enable more efficient use of power based off unique end user patterns. Micron says that it will have additional products available in 2023.

These will target client, edge and data center applications. Cerfe Labs was spun out of ARM in 2020. Cerfe Labs is focused on bringing its Correlated Electron Resistive memory to market.

The company’s electron correlation-based switching uses carbon-doped metal oxide materials. The figure below shows a sub-50nm memory device based upon this technology to the left and resistive changes R=V/I changes observed changes in applied voltage with several target carbon doped metal oxides to the right. These memory devices demonstrate low power, non-filamentary, bulk switching with read and write speeds faster than 2ns.

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The UTD Center for Harsh Environmental Electronics (CHEE) at the North Texas Semiconductor Institute has been involved in testing the operating temperature range for this memory technology. Cerfe Labs is a founding partner of this center. The center reports that this memory is effective in an operating range going from 870mK to 300C as shown below.

Very low and high temperature CeRAM memory operation From Cerfe Labs Briefing The ability to have a memory that operates at sub-Kevin temperatures could make this an effective memory for cryogenic applications, perhaps even a memory for quantum computers. Higher temperature application can include some applications in vehicles, factors and other harsh environments. Cerfe Labs said that, “The robustness of the CeRAM operation has attracted attention from private customers as well as the United States Government agencies such as the Department of Energy and the Department of Defense.

Cerfe Labs’ hightemperature work is now partly funded through the Air Force SBIR contract and is being performed at UT Dallas (PI: Prof. Chadwin Young, Prof. Manuel Quevedo, Prof.

Ken O, Prof. Rashaunda Henderson). Cerfe Labs fabricates and characterizes the CeRAM devices at the Natural Science and Engineering Research Laboratory (NSREL) at UT Dallas, demonstrating the critical third-party validation of the CeRAM technology.

Cerfe Labs is also a founding partner of UT Dallas’ Center for Harsh Environment of Engineering at the North Texas Semiconductor Institute, which will provide additional harsh environment characterization methods such as additional radiation testing. ” Micron’s latest 1 beta DRAM memory introduction provides denser and faster memory for mobile, client, edge and data center applications. Cerfe Labs CeRAM may provide memory for harsh environments from sub-Kelvin to 300+ Celsius applications.

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